Transactions of Nonferrous Metals Society of China The Chinese Journal of Nonferrous Metals

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中国有色金属学报

ZHONGGUO YOUSEJINSHU XUEBAO

第22卷    第2期    总第155期    2012年2月

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文章编号:1004-0609(2012)02-0427-07
C/C复合材料表面原位生长SiCw的工艺
李  军1, 2,谭周建1,廖寄乔1, 2,张  翔1,李丙菊1

(1. 中南大学 粉末冶金国家重点实验室,长沙 410083;
2. 湖南金博复合材料科技有限公司,益阳 413000
)

摘 要: 以三氯甲基硅烷(CH3SiCl3, MTS)为先驱体原料,采用化学气相沉积法在C/C复合材料基体上原位生长碳化硅晶须,研究稀释气体流量、催化剂以及沉积温度对碳化硅晶须生长的影响。结果表明:有催化剂存在时可以制备具有较高长径比的SiCw,无催化剂制备的SiC主要以短棒状或球状SiC为主;随着稀释气体流量或者沉积温度的增加,SiCw的产率是先增加、后减少,在1 100 ℃、载气和稀释气体流量均为100 mL/min时,制备的碳化硅晶须的产率最高,晶须质量最好。

 

关键字: 碳化硅晶须;C/C复合材料;稀释气体流量;催化剂;沉积温度

Technology of in-situ growing SiCw on surface of C/C composites
LI Jun1, 2, TAN Zhou-jian1, LIAO Ji-qiao1, 2, ZHANG Xiang1, LI Bing-ju1

1. State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China;
2. Hunan Kingbo Carbon-carbon Composites Co., Ltd., Yiyang 413000, China

Abstract:The silicon carbide whiskers were deposited on C/C composites by chemical vapor deposition (CVD) with methyltrichlorosilane (MTS) as the precursor. The effects of dilute gas flow, catalyst and deposition temperature on the growth of silicon carbide whiskers were investigated. The results show that silicon carbide whiskers (SiCw) with high length-diameter ratio are obtained when there is catalyst, but cosh-like or globular-like silicon carbides are got without catalyst, and with the increase of deposition temperature or the dilute gas flow, the yield of SiCw firstly increases and then decreases, and the highest yield and high quality of silicon carbide whiskers are obtained under the conditions as: deposition temperature of 1 100 ℃ and flow of carry gas and dilute gas both for 100 mL/min.

 

Key words: SiC whiskers; C/C composites; dilute gas flow; catalyst; deposition temperature

ISSN 1004-0609
CN 43-1238/TG
CODEN: ZYJXFK

ISSN 1003-6326
CN 43-1239/TG
CODEN: TNMCEW

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