(淄博学院材料系，淄博 255200)
摘 要: 用电位阶跃法，得出产生光滑铜沉积时硫脲(TU) 的最佳浓度范围为10 mg/L。由电解制样，并对样品进行X射线衍射、SEM测试 ，结果表明，硫脲的存在使沉积表面颗粒细化，但其浓度大于20 mg/L时会造成“突出”生长，从而显著影响沉积织构及沉积生长类型。X射线光电子能谱(XPS)分析表明，铜沉积中的“硫”主要来自硫脲。
关键字: 铜沉积 硫脲 共沉积
（Department of Materials Science and Engineering, Zibo college, Zibo 255200, P. R. China）
Abstract:The smooth copper deposition has been investigated by potentiostatic steps method, and the obtained optimum concentration of thiourea in electrolyte is 10mg/L. The results of XRD a nd SEM for electrolysis sample showed that the thiourea makes the grains fine on deposit surface, and obviously affects the texture and growing structure type of copper deposit when the concentration of thiourea is more than 20mg/L. The results of XPS analysis showed that the “sulphur” in copper deposit is of thiourea origion.
Key words: copper thiourea codeposition
