Transactions of Nonferrous Metals Society of China The Chinese Journal of Nonferrous Metals

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中国有色金属学报

ZHONGGUO YOUSEJINSHU XUEBAO

第19卷    第7期    总第124期    2009年7月

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文章编号:1004-0609(2009)07-1278-06
溅射气压对ZnO透明导电薄膜光电性能的影响
周继承,李  莉

(中南大学 物理科学与技术学院,长沙 410083)

摘 要: 采用射频磁控溅射方法,在普通玻璃上制备了具有高度c轴取向的ZnO薄膜,研究了溅射气压(0.2~1.5 Pa)对ZnO薄膜的微观结构和光电性能的影响。AFM、XRD、UV-Vis分光光度计及四探针法研究表明:随着溅射气压的增大,ZnO薄膜沿c轴方向的结晶质量提高,晶粒细化,薄膜表面更加致密,晶粒大小更加均匀;ZnO薄膜在400~900nm范围内的平均透过率均高于85%,其中在0.5~1.5 Pa范围内其透过率高于90%;样品在高纯氮气气氛中经350 ℃,300 s退火后,电阻率最低达到10−2 Ω∙cm量级。

 

关键字: 射频磁控溅射;ZnO薄膜;溅射气压;透明导电薄膜

Effects of sputtering pressure on electrical and optical properties of transparent conducting ZnO thin film
ZHOU Ji-cheng, LI Li

School of Physics Science and Technology, Central South University, Changsha 410083, China

Abstract:ZnO thin films were deposited on glass substrate using the reactive radio-frequency (RF) magnetron sputtering method. The influences of pressure on the surface morphology, the electrical and optical properties were studied by AFM, XRD, UV-Vis spectrophoto meter and four-probe method. The experimental results indicate that the crystalline quality of ZnO thin film is improved and the thin film shows higher c-axis orientation with increasing the pressure. The average transparency of ZnO thin films is higher than 85% in the range of 400~900 nm under different pressures, and the average transparency is higher than 90% at the pressure between 0.5~1.5 Pa. After annealing at 350 ℃ for 300 s under N2 ambient, the lowest resistivity is 10−2 Ω·cm.

 

Key words: radio-frequency magnetron sputtering; ZnO thin film; sputtering pressure; transparent conducting thin film

ISSN 1004-0609
CN 43-1238/TG
CODEN: ZYJXFK

ISSN 1003-6326
CN 43-1239/TG
CODEN: TNMCEW

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