(1. 合肥工业大学 材料科学与工程学院，合肥 230009；
2. Department of Chemical and Materials Engineering, University of Alberta, EdmontonT6G 2G6, Canada)
摘 要: 采用扫描电子显微镜(SEM)、电子能谱仪(EDS)、X射线衍射仪(XRD)对室温时效及125~225 ℃热处理的电沉积Ag/Sn偶反应区结构及相组成进行分析，研究Ag/Sn界面固相反应的动力学过程。研究表明：在刚电沉积的Ag/Sn偶中发生Ag/Sn界面固相反应，形成Ag3Sn；在室温时效过程中Ag3Sn层生长缓慢，但随着热处理温度的提高(125~200 ℃)，Ag3Sn层生长速率显著提高；Ag/Sn界面固相反应为一扩散控制的反应过程，反应的激活能为70.0 kJ/mol。
关键字: 电沉积；电子封装材料；界面反应；反应动力学
（1. School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, China;
2. Department of Chemical and Materials Engineering, University of Alberta, EdmontonT6G 2G6, Canada）
Abstract: The microstructures and phases of reaction regions of the electroplated Ag/Sn couples were studied by using SEM, EDS and XRD, after the couples were aged at room temperature and annealed at 125−225 ℃ for various times. The interfacial reaction kinetics of the Ag/Sn couples was also investigated. The results show that in the as-deposited Ag/Sn couple, the reaction between Ag and Sn occurs to form a thin Ag3Sn layer distributed at the Ag/Sn interface. The growth of the Ag3Sn layer is much slow when the couple is aged at room temperature, however, dramatically increases with the annealing temperature (125−200 ℃). The interfacial reaction of the Ag/Sn couples follows a diffusion-controlled kinetics with activation energy of 70.0 kJ/mol.
Key words: electroplation; electronic packaging materials; interfacial reaction; reaction kinetics
