中国有色金属学报(英文版)
Transactions of Nonferrous Metals Society of China
| Vol. 9 No. 3 September 1999 |
（General Research Institute for Nonferrous Metals, Beijing100088, P.R.China）
Abstract:Microstructure of P+-Si0.65Ge0.35/p-Si HIP infrared detector has been studied by using localization cross-section transmission electron microscopy. The photosensitive region of the detector consists of 6 P+-Si0.65Ge0.35 layers and 5 UD-Si layers, which are flat and have thickness of 6nm and 32nm, respectively. A stress field exists on the interface between Si0.65Ge0.35 and UD-Si layers, but no any crystal defect has been found in this region, except the edges of this region. Both Si0.65Ge0.35 and UD-Si layers on amorphous SiO2 layer consist of polycrystals and are in wave. There is defect area in the edges of photosensitive region. The area appears in a shape of inverse triangle and the maximum width is less than 120 nm. The crystal defects are stacking faults and microtwins.
Key words: infrared detector; heterojunction semiconductor device; microstructure of semiconductor device; transmission electron microscopy
