(1. 湖南科技大学 化学化工学院 理论有机化学与功能分子教育部重点实验室，湘潭 411201；
2. 湖南农业大学 资源环境学院，长沙 410128)
摘 要: BiVO4/WO3异质结薄膜因其优异的光电催化活性，已成为光电催化领域的研究热点。然而，目前制备BiVO4/WO3异质结薄膜通常采用简单的沉积方法，制备的薄膜存在大量的晶隙和界面缺陷，不利于载流子在界面处的传输。本文利用WO3→Bi2WO6→BiVO4原位相转换的原理，成功制备BiVO4/WO3异质结薄膜。通过XRD和TEM等手段表征BiVO4/WO3异质结薄膜的结构，发现制备的薄膜存在晶隙和界面缺陷少的特点。以制备的薄膜为光阳极，通过光电化学测试，表明原位生长法制备的BiVO4/WO3薄膜的光电化学性能优于沉积法制备的BiVO4/WO3薄膜的，原位生长法制备的BiVO4/WO3薄膜的光电流密度达到0.32 mA/cm2 (φ=1 V (vs. Ag/AgCl))。
关键字: CdS/TiO2；光电化学；原位法；光阳极；异质结
（1. Key Laboratory of Theoretical Chemistry and Molecular Simulation, Ministry of Education, School of Chemistry and Chemical Engineering, Hunan University of Science and Technology, Xiangtan 411201, China;
2. College of Resources and Environment, Hunan Agricultural University, Changsha 410128, China）
Abstract:BiVO4/WO3 heterojunction films have attracted much attention in the field of photoelectrocatalysis due to its excellent photoelectrochemical activity. However, the BiVO4/WO3 films prepared by the simple deposition methods at present exhibited numerous grain boundaries and interface defects, which were unfavorable to the charge transfer in the BiVO4/WO3 interface. In this paper, BiVO4/WO3 films were prepared based on the principle of in-situ transformation (WO3→Bi2WO6→BiVO4). The prepared BiVO4/WO3 films were characterized by XRD and TEM. The results show that the prepared BiVO4/WO3 films have less grain boundaries and interface defects. The photoelectrochemical (PEC) measurements indicate that the BiVO4/WO3 films prepared by the in-situ method have a photocurrent density as high as 0.32 mA/cm2 (φ=1 V (vs. Ag/AgCl)), present a higher PEC activity than those prepared by the deposition method.
Key words: BiVO4/WO3; photoelectrochemical; in situ; photoanode; heterojunction
