(1. 福州大学 材料科学与工程学院，福州 350116；
2. 福州大学 至诚学院，福州 350002)
摘 要: ZnSb基热电材料是中温区热电性能较好的一种材料，为进一步提升其性能，采用磁控溅射(射频+直流)的方法制备掺杂型ZnSb基热电薄膜；通过改变溅射功率控制Ag元素的掺杂量，通过真空退火来实现掺杂元素的均匀化和膜层的结晶，真空退火温度选用300 ℃，退火时间为1 h。利用扫描电子显微镜(SEM)、X射线衍射仪(XRD)、霍尔效应测试仪、薄膜Seebeck系数测量系统对薄膜特性进行测试；研究Ag掺杂对ZnSb基热电薄膜膜层结构和热电性能的影响。结果表明：随着Ag掺杂量的增加，薄膜的膜层结构显著改善，掺杂后薄膜中出现Ag3Sb和Zn4Sb3两种新相；掺杂后薄膜的热电性能相比未掺杂薄膜的提升较大，掺杂对薄膜的Seebeck系数也产生了较大的影响。当Ag掺杂量(摩尔分数)为2.88%时，样品获得最大的功率因子，在573 K温度下功率因子为1.979 mW/(m？K2)。
关键字: ZnSb基热电薄膜；磁控溅射；Ag掺杂；膜层结构；热电性能
（1.School of Materials Science and Engineering, Fuzhou University, Fuzhou 350116, China;
2. Zhicheng College, Fuzhou University, Fuzhou 350002, China）
Abstract:The ZnSb-based thermoelectric material is a kind of material with good thermoelectric properties in middle temperature region. In order to further improve its performance, ZnSb thermoelectric thin films were fabricated by magnetron sputtering (RF+DC) with the Zn-Sb binary composite target. The doping amount of the Ag element was controlled by changing the sputtering power. The annealing temperature was 300 ℃ and the annealing time was 1h; the homogenization of the dopant elements and the crystallization of the samples were carried out by vacuum annealing. The properties of the films were tested by scanning electron microscopy (SEM), X-ray diffractometry (XRD), Hall effect tester and thin film Seebeck coefficient measurement system. The effects of doping on the structure and thermoelectric properties of ZnSb-based thermoelectric thin film were studied. The results show that the film structure of the sample improves significantly with the increase of the amount of Ag doping. After the doping, two new phases, Ag3Sb and Zn4Sb3, appear in the doped film. The thermoelectric properties of the doped films improves compared to those of the films without doping. The dopant has a great influence on the Seebeck coefficient of the sample film. It is concluded that the two new phases, Ag3Sb and Zn4Sb3 form after doping are the key factors that cause the structure and thermoelectric properties of ZnSb-based thermoelectric thin film.
Key words: ZnSb based thermoelectric thin film; magnetron sputtering; Ag doped; film structure; thermoelectric performance
