中国有色金属学报(英文版)
Transactions of Nonferrous Metals Society of China
| Vol. 28 No. 7 July 2018 |
（1. School of Mechanical and Electrical Engineering, Shenzhen Polytechnic, Shenzhen 518055, China;
2. School of Mechanical and Electrical Engineering, Guangdong University of Technology, Guangzhou 510006, China;
3. Institute of Technology, East China Jiaotong University, Nanchang 330100, China）
Abstract:The TiN films were deposited on 316L stainless steel substrates at low temperature by arc ion plating. The influences of substrate bias voltage and temperature on microstructure, residual stress and mechanical properties of the films were investigated by EDS, SEM, XRD and nanoindenter tester, respectively. The results showed that the TiN films were highly oriented in (111) orientation with a face-centered cubic structure. With the increase of substrate bias voltage and temperature, the diffraction peak intensity increased sharply with simultaneous peak narrowing, and the small grain sizes increased from 6.2 to 13.8 nm. As the substrate temperature increased from 10 to 300 °C, the residual compressive stress decreased sharply from 10.2 to 7.7 GPa, which caused the hardness to decrease from 33.1 to 30.6 GPa, while the adhesion strength increased sharply from 9.6 to 21 N.
Key words: TiN film; arc ion plating; residual stress; low temperature; bias voltage
