(银川能源学院，银川 750105)
摘 要: 在已导出西门子法三氯氢硅氢还原生成Si-CVD过程本征动力学模型基础上，结合钟罩还原炉内气相物料的基本流动特征和传递-反应-CVD过程，采用反应工程学经典方法，对关键组分在圆柱状硅芯表面CVD层的浓度分布进行分析，导出浓度分布微分方程(零阶贝塞尔方程)和积分方程(零阶贝塞尔函数)，建立了Si的沉积速率模型，即考虑CVD层浓度分布时的平均沉积厚度模型和沉积质量模型，忽略CVD层浓度分布时的平均沉积厚度简化模型和沉积质量简化模型。
关键字: 反应工程；多晶硅；西门子法；三氯氢硅氢还原反应；化学气相沉积；宏观动力学模型
（Yinchuan Energy Institute, Yinchuan 750105, China）
Abstract:On the basis of derived intrinsic-kinetics equation producing the Si-CVD of the hydrogen reduction reaction system of trichlorosilane in the bell furnace, the concentration distribution differential equation (the zero order Bessel equation), integral equation (the zero order Bessel function) and deposition rate model of Si were derived by combining the basic material flow characteristics of the gas phase and transferring reaction-CVD process and analyzing the concentration distribution of key component in the cylindrical silicon core CVD layer with the classical theory of reaction engineering, then the deposition rate model of Si-CVD was established. If CVD player concentration distribution is taken into consideration, the average deposition thickness model and the deposition quality model will be included. If not, the two simplified models will be included.
Key words: reaction engineering; polysilicon; Siemens method; reduction reaction of hydrogen trichlorosilane; chemical vapor deposition; macroscopic kinetics model
