(1. 中南大学 粉末冶金国家重点实验室，长沙 410083；2. 中南大学 材料科学与工程学院，长沙 410083)
摘 要: 封装石英管真空熔炼合成CuIn0.7Ga0.3Se2(CIGS)块体，再采用电子束蒸镀此块体，制备用于太阳电池吸收层的CIGS薄膜，然后对薄膜进行不同温度的真空退火处理。分别采用XRD、EDS、SEM及光谱分析等方法，研究CIGS块体和退火薄膜的表面形貌、晶体结构、成分或者光电性能。结果表明：在1200 ℃、保温2 h后，采用真空熔炼获得结晶性能较好、单一黄铜矿结构的CuIn0.7Ga0.3Se2块体。随着退火温度的升高，薄膜中In-Se杂质相分解，从而获得单一相的CIGS薄膜；并且颗粒不断长大，达到1.0~3.5 μm；成分和光学禁带不断得到优化。600 ℃退火薄膜是比较符合理想太阳电池要求的吸收层材料。
关键字: 太阳电池；CuIn0.7Ga0.3Se2；真空熔炼；电子束蒸镀；退火处理
（1. State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China;
2. School of Materials Science and Engineering, Central South University, Changsha 410083, China）
Abstract:The CuIn0.7Ga0.3Se2 (CIGS) thin films used as absorber layers of solar cell were deposited by electron-beam evaporation utilizing CIGS bulk synthesized by quartz-tube vacuum smelting, followed by annealing treatment in vacuum atmosphere at different temperatures. The performances of CIGS bulk and annealed films on the surface morphology, compositions, crystal microstructure and photoelectric property were studied by X-ray diffractometry (XRD), scanning electron microscopy (SEM), energy dispersive spectrometry (EDS) or spectroscopic analysis, respectively. The results show that ideal CuIn0.7Ga0.3Se2 bulk with good crystallization property and single chalcopyrite structure is obtained by vacuum smelting at 1200 ℃for 120 min. With the increase of annealing temperature, single phase CIGS presents, accompanying by decomposition of In-Se impurity phase. Meanwhile, the grain size continuously grows up to 1.0-3.5 μm, and the composition and optical band gap are gradually optimized. Therefore, the as-annealed film at 600 ℃ is in much more consistent with the absorber layers material of ideal solar cell.
Key words: solar cell; CuIn0.7Ga0.3Se2; vacuum melting; electron-beam evaporation; annealing treatment
