Transactions of Nonferrous Metals Society of China The Chinese Journal of Nonferrous Metals

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中国有色金属学报

ZHONGGUO YOUSEJINSHU XUEBAO

第25卷    第6期    总第195期    2015年6月

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文章编号:1004-0609(2015)06-1648-07
化学气相沉积钨显微组织缺陷的形成与控制
沈艳波1,于晓东1, 2,谭成文1, 2,王富耻1,马红磊2,才鸿年1

(1. 北京理工大学 材料学院,北京 100081;
2. 中国航天员科研与训练中心,北京 100081
)

摘 要: 以WF6为前驱体,采用化学气相沉积法(CVD)在纯铜基体上沉积出钨涂层。利用光学显微镜(OM)和扫描电镜(SEM)分析研究钨制品组织缺陷的形成。结果表明:反应物浓度起伏对化学气相沉积钨的显微组织具有显著影响。当n(WF6):n(H2)≥1:3时,沉积物为柱状晶组织;当n(WF6):n(H2)<1:3时,该沉积层晶粒明显细化,显微组织为细晶层状结构。另外,沉积过程中杂质形状也显著影响沉积层的显微组织。当基体表面存在一维杂质时,沉积制品表面产生明显的凸起,严重影响制品的表面质量和显微组织的均匀性;当沉积过程中存在零维杂质时,沉积层出现放射状的组织结构。

 

关键字: WF6;钨;化学气相沉积;反应物浓度起伏;杂质形状;组织缺陷

Formation and control of microstructure defects of tungsten prepared by chemical vapor deposition method
SHEN Yan-bo1, YU Xiao-dong1, 2, TAN Cheng-wen1, 2, WANG Fu-chi1, MA Hong-lei2, CAI Hong-nian1

1. School of Material Science and Engineering, Beijing Institute of Technology, Beijing 100081, China;
2. China Astronaut Research and Training Center, Beijing 100081, China

Abstract:Tungsten coatings were deposited on pure copper substrates using WF6 as the precursor by chemical vapor deposition (CVD) method. The formation of the microstructure defects of the tungsten deposits was analyzed by OM and SEM. The results show that the reactant concentration fluctuation has a significant impact on the microstructure of tungsten prepared by CVD method. When n(WF6):n(H2)≥1:3, the microstructure of tungsten is columnar grain; when n(WF6):n(H2)<1:3, the grains of the deposited layer are refined and the microstructure presents a fine grains multilayer structure. Moreover, the shapes of the impurities can also influence significantly on microstructure of the layer. When there is one-dimensional impurity on the surface of substrate, the surface of deposition has obvious bulge, which seriously affects the deposits surface quality and microstructure uniformity; when there is zero dimensional impurity during the deposition process, the deposit appears radial structure.

 

Key words: WF6; tungsten; chemical vapor deposition; reactant concentration fluctuation; impurity shape; microstructure defect

ISSN 1004-0609
CN 43-1238/TG
CODEN: ZYJXFK

ISSN 1003-6326
CN 43-1239/TG
CODEN: TNMCEW

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