Transactions of Nonferrous Metals Society of China The Chinese Journal of Nonferrous Metals

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中国有色金属学报(英文版)

Transactions of Nonferrous Metals Society of China

Vol. 25    No. 3    March 2015

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Effects of deposition parameters on HFCVD diamond films growth on inner hole surfaces of WC-Co substrates
Xin-chang WANG, Zi-chao LIN, Bin SHEN, Fang-hong SUN

School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China

Abstract:Deposition parameters that have great influences on hot filament chemical vapor deposition (HFCVD) diamond films growth on inner hole surfaces of WC-Co substrates mainly include the substrate temperature (t), carbon content (φ), total pressure (p) and total mass flow (F). Taguchi method was used for the experimental design in order to study the combined effects of the four parameters on the properties of as-deposited diamond films. A new figure-of-merit (FOM) was defined to assess their comprehensive performance. It is clarified that t, φ and p all have significant and complicated effects on the performance of the diamond film and the FOM, which also present some differences as compared with the previous studies on CVD diamond films growth on plane or external surfaces. Aiming to deposit HFCVD diamond films with the best comprehensive performance, the key deposition parameters were finally optimized as: t=830 °C, φ=4.5%, p=4000 Pa, F=800 mL/min.

 

Key words: hot filament chemical vapor deposition diamond film; inner hole surface; Taguchi method; deposition parameter; optimization

ISSN 1004-0609
CN 43-1238/TG
CODEN: ZYJXFK

ISSN 1003-6326
CN 43-1239/TG
CODEN: TNMCEW

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