Transactions of Nonferrous Metals Society of China The Chinese Journal of Nonferrous Metals

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中国有色金属学报(英文版)

Transactions of Nonferrous Metals Society of China

Vol. 24    No. 9    September 2014

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Effect of bias voltage on microstructure and nanomechanical properties of Ti films
Ying-long LIU1, Fang LIU2, Qian WU2, Ai-ying CHEN2, Xiang LI2, Deng PAN2

1. School of Mechanical Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China;
2. School of Materials Science and Engineering, University of Shanghai for Science and Technology,
Shanghai 200093, China

Abstract:In order to investigate nanomechanical properties of nanostructured Ti metallic material, pure Ti films were prepared by magnetron sputtering at the bias voltage of 0-140 V. The microstructure of Ti films was characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). It is interesting to find that the microstructure of pure Ti films was characterized by the composite structure of amorphous-like matrix embodied with nanocrystallines, and the crystallization was improved with the increase of bias voltage. The hardness of Ti films measured by nanoindentation tests shows a linear relationship with grain sizes in the scale of 6-15 nm. However, the pure Ti films exhibit a soft tendency characterized by a smaller slope of Hall-Petch relationship. In addition, the effect of bias voltage on the growth orientation of Ti films was discussed.

 

Key words: Ti film; magnetron sputtering; bias voltage; nanocrystalline; Hall-Petch relationship

ISSN 1004-0609
CN 43-1238/TG
CODEN: ZYJXFK

ISSN 1003-6326
CN 43-1239/TG
CODEN: TNMCEW

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