(江苏科技大学 江苏省先进焊接技术重点实验室，镇江 212003)
摘 要: 采用磁控溅射技术制备一系列不同负偏压的TaN薄膜。分别采用扫描电子显微镜、X射线衍射仪、原子力显微镜、纳米压痕仪和高温摩擦磨损仪研究不同负偏压对单层TaN薄膜的微观结构、表面形貌、力学性能和摩擦性能的影响。结果表明：TaN薄膜主要为面心δ-TaN和斜方Ta4N晶体结构，择优取向随着负偏压的不同而不同；当负偏压为80 V时，TaN薄膜的硬度和弹性模量均达到最大值，分别为30.103和317.048 GPa，并且此时薄膜的膜-基结合最强；常温下单层TaN薄膜的摩擦因数与负偏压关系不大，基本保持在0.64~0.68之间；高温下，随着温度的升高，摩擦因数逐渐降低。
关键字: TaN薄膜；负偏压；微观结构；摩擦性能
（Key Laboratory of Advanced Welding Technology of Jiangsu Province,
Jiangsu University of Science and Technology, Zhenjiang 212003, China）
Abstract:A series of TaN films were fabricated at various bias voltages by magnetron sputtering technique. Their microstructure, surface morphology, mechanical and friction properties were investigated by scanning electron microscope (SEM), X-ray diffraction (XRD), atomic force microscope (AFM), nano indentation tester and friction and wear tester, respectively. The results show that the structure of TaN is composed of cubic δ-TaN and orthorhombic Ta4N, while the preferred orientation changes with the bias voltage. When the bias voltage is 80 V, the hardness and elastic modulus of the films reach the maximum values, 30.103 and 317.048 GPa, respectively, and the interfacial adhesion is the strongest. At room temperature, the friction coefficients of the films that are influenced slightly by bias voltage vary between 0.64 and 0.68. At high temperatures, the friction coefficients of the films decrease with the increase of temperature.
Key words: TaN films; bias voltage; microstructure; friction properties
