Transactions of Nonferrous Metals Society of China The Chinese Journal of Nonferrous Metals

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中国有色金属学报(英文版)

Transactions of Nonferrous Metals Society of China

Vol. 23    No. 1    January 2013

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Microstructure and properties of electronic packaging box with high silicon aluminum-base alloy by semi-solid thixoforming
Qi-jin JIA1, Jun-you LIU1, Yan-xia LI1,2, Wen-shao WANG1

1. School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China;
2. Department of Materials, North China Institute of Aerospace Engineering, La

Abstract:The electronic packaging box with high silicon aluminum-base alloy was prepared by semi-solid thixoforming technique. The flow characteristic of the Si phase was analyzed. The microstructures of different parts of the box were observed by optical microscopy and scanning electron microscopy, and the thermophysical and mechanical properties of the box were tested. The results show that there exists the segregation phenomenon between the primary Si phase and the liquid phase during thixoforming, the liquid phase flows from the box, and the primary Si phase accumulates at the bottom of the box. The volume fraction of primary Si phase decreases gradually from the bottom to the walls. Accordingly, the thermal conductivities of bottom center and walls are 107.6 and 131.5 W/(m·K), the coefficients of thermal expansion (CTE) are 7.9×10-6 and 10.6×10-6 K-1, respectively. The flexural strength increases slightly from 167 to 180 MPa. The microstructures and properties of the box show gradient distribution overall.

 

Key words: high silicon aluminum-base alloy; electronic packaging; semi-solid thixoforming; thermal conductivity; coefficient of thermal expansion

ISSN 1004-0609
CN 43-1238/TG
CODEN: ZYJXFK

ISSN 1003-6326
CN 43-1239/TG
CODEN: TNMCEW

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