(中南大学 物理科学与技术学院，长沙 410083)
摘 要: 利用晶硅电池模拟软件PC1D研究晶硅衬底的厚度、少子寿命及掺杂浓度对电池输出特性的影响规律。结果表明：晶硅衬底的厚度对电池输出特性的影响与其少子的扩散长度有关，衬底厚度的减小有利于其开路电压的提高，存在一最佳厚度值使其转换效率、短路电流及填充因子最高；当少子的扩散长度远大于衬底厚度时，电池的输出特性几乎与衬底厚度无关；当衬底少子扩散长度与衬底厚度的比值为2.5~3.0时，电池的转换效率最高；晶硅衬底的掺杂浓度在5×1015~1×1017 cm−3之间，即电阻率在0.2~3.0 Ω·cm范围内时，晶硅电池能获得良好的输出特性。
关键字: 晶硅电池；衬底参数；转换效率；输出特性
（School of Physics Science and Technology, Central South University, Changsha 410083, China）
Abstract:The effects of crystalline silicon substrate properties as thickness, minority carrier lifetime and doping density on the solar cell output properties were simulated by PC1D. The results show that the influence of substrate thickness on the output properties is related with the minority carrier diffusion length, the reduce of the thickness can increase the open circuit voltage, there exists a good thickness value that can get better conversion efficiency, short circuit current density and fill factor; when the minority carrier diffusion length is far larger than the substrate thickness, the properties of solar cell almost have no business with the substrate thickness; when the ratio of substrate minority carrier diffusion length to the thickness is 2.5−3.0, the solar cell has the highest conversion efficiency; when the doping density is between 5×1015−1×1017 cm−3, that is the resistivity is varied between 0.2−3.0 Ω·cm, the solar cell can get better output properties.
Key words: crystalline silicon solar cell; substrate parameters; conversion efficiency; output properties
