(中南大学 粉末冶金国家重点实验室，长沙410083)
摘 要: 采用ZrCl4-CH4-H2-Ar反应体系、固态输送ZrCl4粉末低压化学气相沉积(CVD)制备ZrC涂层。研究温度对低压化学气相沉积ZrC涂层物相组成、晶体择优生长、涂层表面形貌、断面结构、涂层生长速度和沉积均匀性等方面的影响。结果表明：不同温度下沉积的涂层主要由ZrC和C相组成；随着温度的升高，ZrC晶粒(200)晶面择优生长增强，颗粒直径增大，表面致密性增加，沉积速率上升；涂层断面结构以柱状晶为主；随着离进料口距离的增加，涂层的沉积速率逐渐减小；1 500 ℃时，沉积系统的均匀性比1 450 ℃时的差。
关键字: ZrC涂层；温度；低压；化学气相沉积
low pressure chemical vapor deposition
（State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China）
Abstract:ZrC film was deposited by chemical vapor deposition with ZrCl4-CH4-Ar system, and ZrCl4 particles was transported in solid. The influences of temperature on the phase composition, preferential growth of the crystals, surface morphology, fracture surface morphology, deposition rate and deposition uniformity of the coatings were studied. The results show that the film prepared at different temperatures is composed of ZrC and carbon. The crystal plane (200) of ZrC film grows up, micro-crystallites grow up, the surface get densely sintered, and the deposition rate increases with increasing the temperature. The columnar crystal is the main body of the fracture surface structure. The deposition rate decreases gradually with increasing the distance between the sample and the feeds entrance. The uniformity of the deposition system at 1 500 ℃ is worse than that at 1 450 ℃.
Key words: ZrC film; temperature; low pressure; chemical vapor deposition
