(1. 北京有色金属研究总院 先进电子材料研究所，北京 100088；
2. 北京有色金属研究总院 粉体国家工程中心，北京 100088)
摘 要: 采用KrF脉冲准分子激光器烧蚀高阻多晶Si靶，分别在液氮冷却至200 K的高定向石墨(HOPG)和单晶Si(100)衬底上制备分散单晶Si纳米颗粒。采用拉曼谱(Raman)和高分辨透射电镜(HRTEM)分析证实Si纳米晶粒的形成。结果表明：所形成的纳米Si颗粒具有均匀分散性，相应的光致发光峰位出现在585 nm，峰值半高宽为70 nm；与相同参数下常温衬底的结果相比，所形成的纳米Si颗粒具有较窄的光致发光谱，并显示出谱峰蓝移现象；Si纳米颗粒尺寸的均匀分布是窄发光带的主要原因。
关键字: 纳米Si颗粒；窄发光带；脉冲激光烧蚀；尺寸分布；光致发光
prepared by laser ablated deposition
（1. Institute of Advanced Electronic Materials, General Research Institute for Nonferrous Metals, Beijing 100088, China;
2. National Engineering Research Center for Powder, General Research Institute for Nonferrous Metals, Beijing 100088, China）
Abstract:The dispersed single crystalline Si nanoparticles were synthesized by KrF excimer laser ablation on HOPG and single crystalline Si(100) substrate cooled by liquid nitrogen to 200 K, respectively. The Raman and HRTEM analysis of the nanoparticles deposited on the HOPG substrate indicate that the Si nanoparticles are crystalline. The results show that the nanoparticles on the Si substrate have a mosaic structure with uniform size. The corresponding photoluminescence (PL) peak wavelength is 589 nm with full width at half maximum of 70 nm, which is blue-shifted and narrower than that obtained at room temperature substrates. The narrow PL spectrum result is attributed to the uniform size of Si nanoparticles.
Key words: Si nanoparticles; narrow photoluminescence peak; pulsed laser ablation; size distribution; photoluminescence (PL)
