(1.广州有色金属研究院新材料室，广州510651；
2.清华大学材料科学与工程系，北京100084)
摘 要: 用离子束增强沉积方法制备了Si-N薄膜，其中Si由一束Ar离子从Si靶上溅射下来，在溅射沉积的同时，以一束N离子轰击正在沉积的膜层，于是获得了Si-N膜。采用卢瑟福背散射、红外光谱和透射电镜对膜层的成分和结构进行了分析，结果表明：膜面平整，膜层为非晶或微晶结构，由Si和β-Si3N4组成。
关键字: 离子束增强沉积 Si-N膜
OF Si-N THIN FILMS
（1.Guangzhou Research Institute ofNonferrous Metals, Guangzhou 510651）
Abstract:Ion beam enhanced deposition of Si-N thin films was studied. Si-N thin films were formed by simultaneous bombardment of nitrogen ion beam during sputter deposition of silicon by an argon ion beam. The composition and the structure of the films were analyzed by means of RBS, IR and TEM. The smooth films with microcrystalline or amorphous structure consisted of Si and stoichiometricβ-Si3N4.
Key words: ion beam enhanced deposition (IBED) Si-N thin films nitrogen ion beam
