文章编号：(1996)02-44-3
氮气氛下直拉硅中氮含量的红外光谱测定①
(中南工业大学应用物理与热能工程系，长沙410083)
摘 要: 提出了利用直拉硅中与氮有关的特征红外吸收峰963、996、1081-1及1027cm-1确定直拉硅中氮含量的计算公式并进行了多种样品实测。该法克服了只用963cm-1峰测定直拉硅中氮使结果偏低的弊病，方法相对偏差为5%~20%。
关键字: 硅 氮 红外吸收光谱法
DETERMING NITROGEN IN CZOCHRALSKI-SILICON
BY INFRARED ABSORPTION SPECTROMETRY
BY INFRARED ABSORPTION SPECTROMETRY
（Department of Applied Physics and Heat Engineering,
Central South University of Technology,Changsha 410083）
Abstract:The calculation formula for determination of nitrogen in CZ-Si grown under nitrogen atmosphere by infrared absorption lines related to nitrogen at 963, 996, 1 018 and 1 027cm-1was given and the samples were measured with RSD 5%~20%. This method eliminated the deviation caused by using only 963cm-1in CZ-Si.
Key words: silicon nitrogen infrared absorption spectrometry
