(中南工业大学应用物理与热能工程系，长沙 410083;
北京有色金属研究总院， 北京 100088;
浙江大学硅材料国家重点实验室， 杭州 310027)
摘 要: 为减小硅片高温工艺中的形变， 通过仿硅器件在1200℃热处理1.5h 高温工艺热处理实验， 研究了装片方式、 升温速率和急冷温度等工艺条件对硅片弯曲度变化的影响， 实验结果表明硅片热处理中塑性形变主要是在急冷过程产生的，快速加热对形变影响不大。 急冷温度越高，硅片中心与边缘温差越大，因产生位错和滑移形成的塑性形变就越大， 1200 ℃急冷的弯曲度变化是770℃急冷的4倍，水平装片比竖直装片形变大，紧贴式装片比间隔式容易弯曲。 采用降低急冷温 度，由1200℃缓慢降至770 ,℃左右再急冷， 配合竖直间隔方式装片和容器加盖等方法可减少高温工艺中硅片的形变。
关键字: 硅片 高温工艺 塑性形变
（Department of Applied physics and Heat Engineering, Central South University of Technology, Changsha 410083, P. R. China
Beijing General Research Institute for Non-ferrous Metals, Beijing 100088, P. R. China
State Key Laboratory of Si Materials, Zhejiang University, Hangzhou 310027, P. R. China）
Abstract:The effects of elevated temperature process parameters, fashion of placing wafer, elevating temperature rate and fast cooling temperature on the change of bow of silicon wafer were studied by 1200 ℃ for 1. 5 h heat treatment of silicon wafer for decreasing plastic deformation of silicon wafer during high temperature process. The results showed that the fast cooling caused the plastic deformation, and the fast heating did not affect the deformation; the higher the fast cooling temperature and the larger the difference of temperature between the centre and the edge of a silicon wafer, the larger the plastic deformation caused by the dislocation and its slip. The change of bow of silicon wafer cooled at 1200 ℃ was 4 times that at 770 ℃. Decreasing the fast cooling temperature, covering the vessal and placing the wafers perpendicularly with gap decreased the deformation of the silicon wafer.
Key words: silicon wafer elevated temperature process plastic deformation
