(华南理工大学机电工程系，广州 510641)
摘 要: 采用TEM研究了SiC/Al-Si复合材料，提出了“界面Si”的概念。由于与增强体SiC不润湿，初生α(Al)相不在SiC颗粒上形核并对其发生排斥。（Al+Si）共晶体中的共晶领先相S i优先在SiC表面上形核、长大，形成界面Si，并形成大量SiC/Si界面。SiC/Si界面“干净”、平直，结合紧密，其中未发现任何界面相。在个别SiC/Al界面上析出了二次Si。
关键字: SiCp/Al-Si复合材料 界面Si SiC/Si界面 二次析出Si
（Department of Mechanical and Engineering,
South China University of Technology, Guangzhou 510641, P. R. China）
Abstract:SiCp/Al-Si composites were studied by means of conventional TEM. The conception of "interfacial Si" was proposed. Because of the nonwetting between liquid metal and reinforcing particles, primary α phase rejects SiC particles and does not nucleate on them. It was discovered that the leading phase Si in the (Al+Si) eutectic tends to nucleate and grows preferentially at the SiC surface, thus forming the characteristic "interfacial Si", and the SiC/Si interfaces. The SiC/Si interfaces are found to be smooth, clean and closely bonded; no voids, reaction layers or other interfacial phases are found at the interfaces except the "interfacial Si". Beside the large-side eutectic Si, tiny Si particles were also found precipitate in some Si C/Al interfaces, forming the "secondary Si precipitates".
Key words: SiCp/Al-Si composites; interfacial Si; SiC/Si interface; secondary Si
