——半导体能带理论及模型
(1. 广西大学资源与环境学院，南宁530004；2. 中南工业大学矿物工程系，长沙410083)
摘 要: 根据硫化矿物的半导体性质以及硫化矿浮选的电化学特性，得出了半导体矿物-溶液界面的电子能级分布能带模型。提出采用矿物浮选常用参数，即矿物静电位和矿物颗粒表面动电位来计算硫化矿物的费米能级和边缘能级的简便方法。矿物的禁带宽度、功函数、药剂吸附、溶液性质以及离子强度等因素能够改变矿物边缘能级的大小。
关键字: 半导体矿物； 能带理论； 浮选
（1. College of Resource and Environment, Guangxi University, Nanning 530004, P.R.China;
2. Dept. of Mineral Engineering, Central South Univ. of Technology, Changsha 410083, P.R.China）
Abstract:The energy band model of electronic level distribution at solid-solution interface has been described according to semiconductor properties of sulfide minerals and electrochemical characteristics of sulfide flotation. The simple methods are put forward to calculate Fermi level and edge level of sulfide mineral by means of potential of mineral electrode and zeta potential of mineral surface. Band gap width of sulfide mineral, work function, adsorption of reagents, solution property and ion strength of solution can affect edge level of sulfide mineral.
Key words: semiconductor minerals; energy band theory; flotation
