Transactions of Nonferrous Metals Society of China The Chinese Journal of Nonferrous Metals

您目前所在的位置:首页 - 期刊简介 - 详细页面

中国有色金属学报

ZHONGGUO YOUSEJINSHU XUEBAO

第13卷    第6期    总第57期    2003年12月

[PDF全文下载]        

    

文章编号:1004-0609(2003)06-1414-06
离子束辅助沉积铪薄膜晶粒的择优取向
江炳尧1, 任琮欣1, 郑志宏1, 柳襄怀1, 樊会明2
 姚刘聪2, 李玉涛2, 苏小保2

(1. 中国科学院 上海微系统与信息技术研究所离子束重点实验室,
 上海 200050; 
2. 中国科学院 电子学研究所, 北京 100080
)

摘 要: 采用离子束辅助沉积方法(IBAD)在Si(111)衬底上沉积了铪薄膜。 实验发现: 在铪膜生长时, 轰击铪膜的Ar↑+离子的能量、 入射角度和束流密度对薄膜的晶粒取向有很大的影响。 当Ar↑+离子的能量为500eV、 入射角为75°、 束流密度为0.9A/m2时, 铪膜为(110)择优取向。 当束流密度大于1.2A/m2时, 铪膜以(002)、 (100)混合晶向为主, 而与Ar↑+离子的入射角度无关。 讨论了铪膜晶粒取向的转变机制, 认为铪膜晶粒的择优取向,不是单纯地取决于基于沟道效应的溅射机制, 或取决于基于能量极小原理的表面能最小或表面应力最小的面生长较快的机制, 而是影响薄膜生长的各种因素互相竞争、 共同作用,在非平衡态条件下表面能极小化的结果。

 

关键字: 离子束辅助沉积;铪膜; 择优取向

Preferred crystal orientation of Hf films prepared by 
ion beam assisted depostion
JIANG Bing-yao1, REN Cong-xin1, ZHENG Zhi-hong1,
 LIU Xiang-huai1, FAN Hui-ming2, YAO Liu-cong2
LI Yu-tao2

1. Ion Beam Laboratory, Shanghai Institute of Microsystem and Information Technology,
Chinese Academy of Sciences, Shanghai 200050, China; 
2. Institute of Electronics, Chinese Academy of Sciences, Beijng 100080, China

Abstract:Hf films were synthesized by ion beam assisted deposition(IBAD). The influence of ion bombardment during deposition on the preferred orientation of films was studied. Hf film grains exhibit preferred (110) orientation when the growing film is bombarded by 500eV Ar+ ions at an incident angle of 75° and a current density of 0.9A/m2. When the current density is beyond 1.2A/m2, the Hf films exhibit mixed (002) and (100) orientation and which is not concerned with the ion incident angle. The reason for the preferred orientation of Hf film was discussed. It is considered that the preferred orientation of Hf films does not simply depend on the channeling effects of ions, or the grain surface energy, but it is the result of mutual competition and actions of several factors, which influences the crystallographic orientation of thin films in the non-equilibrium growth conditions.

 

Key words: ion beam assisted deposition(IBAD); Hf film; preferred orientation

ISSN 1004-0609
CN 43-1238/TG
CODEN: ZYJXFK

ISSN 1003-6326
CN 43-1239/TG
CODEN: TNMCEW

主管:中国科学技术协会 主办:中国有色金属学会 承办:中南大学
湘ICP备09001153号 版权所有:《中国有色金属学报》编辑部
------------------------------------------------------------------------------------------
地 址:湖南省长沙市岳麓山中南大学内 邮编:410083
电 话:0731-88876765,88877197,88830410   传真:0731-88877197   电子邮箱:f_ysxb@163.com