(1. 西安理工大学 电子工程系, 西安 710048；
2. 宁夏星日电子股份有限公司, 石嘴山 753000)
摘 要: 介绍了铌电容器发展的起因、 背景、 历程及现状。 确定了铌电容器电介质氧化膜的稳定性是影响其性能的首要因素， 并对产生电介质氧化膜的电化学反应进行了对比研究。结果表明： 选择合适的形成液类型及形成时间等条件， 可以明显改善五氧化二铌电介质膜的稳定性， 从而使铌电容器的性能得到有效改善和控制， 并进一步接近钽电容器性能，具有工业化应用潜力。
关键字: 铌电容器； 电介质； 容量； 漏电流
dielectric stability
（1. Department of Electronic Engineering,
Xi′an University of Technology, Xi′an 710048, China;
2. Ningxia Xingri Electronics Co. Ltd.,
Shizuishan 753000, China）
Abstract:The application of metal niobium for making niobium capacitor in electronic industry was introduced, and the original, background, history and current state for development of niobium capacitor were described. The stability of dielectric film has influence on performance of niobium capacitor. A better result was finally obtained through comparative experiments on the dielectric film formed electrochemically. The result shows that the stability of niobium pentoxide dielectric film is greatly improved by optimizing process conditions such as type of formation solution and formation time. As a result, the performance of niobium capacitor is effectively controlled and improved, thereby solid niobium capacitor equivalent to tantalum capacitor at performance can be manufactured, and has potential for industrialization application.
Key words: niobium capacitor; dielectric film; capacitance; leakage current
