(1. 重庆大学 材料科学与工程学院冶金系，
重庆 400044;
2. 攀枝花钢铁研究院综合室， 攀枝花 617000)
摘 要: 以工业V2O5为原料，采用热分解法和还原法制备工业VO2薄膜。研究了制备工艺参数对电阻突变的影响及其在自然放置条件下的稳定性。结果表明：1）VO2薄膜的电阻突变达到了2.0～3.4个数量级，突变温度约为35℃，比纯VO2薄膜突变温度约低33℃；2）石英玻璃上的VO2薄膜的电阻突变数量级比普通玻璃上的大；3）H2还原法制备的VO2薄膜电阻突变数量级比N2热分解法制备的大；4）在自然放置条件下短时间内 VO2薄膜可承受连续、反复多次的电阻突变，其突变数量级降低不多，突变温度滞后几乎没有变化；5）同等条件下石英玻璃上的VO2薄膜的电阻突变数量级降低较小、稳定性较好。
关键字: V2O5 ；VO2；薄膜；电阻；M-S相变
（1. College of Materials Science and Engineering,
Chongqing University, Chongqing 400044， China；
2. Panzhihua Iron & Steel Research Institute，
Panzhihua 617000， China）
Abstract:Industrial VO2 crystal thin films are produced through thermal decomposition method and reduction method with industrial V2O5 as raw material. The suddenly changing properties of VO2 thin films resistance were tested. The effects of preparation technological parameters on suddenly changing of VO2 thin films resistance and its stability at natural condition were studied. The results show that： 1)The suddenly changing of VO2 thin films resistance reaches 2.0～3.4 order of magnitude, and the temperature of its suddenly changing is about 35℃, which is lower 33℃ than that of pure VO2 thin film； 2)the order of magnitude of suddenly changing of the VO2 thin films resistance on quartz glass are larger than those on ordinary glass; 3)the order of magnitude of suddenly changing of the VO2 thin films resistance by H2 reduction method are larger than those by N2 thermal decomposition method; 4)VO2 thin films can undergo continuous and repeat the M-S phase transition at natural conditions and in short time, decreasing of order of magnitude of suddenly changing is less, and temperature hysteresis of suddenly changing do not nearly vary； 5)under the same conditions the decreasing of order of magnitude of suddenly changing of VO2 thin films resistance on quartz glass is less, and its stability is better.
Key words: vanadium dioxide； vanadium pentoxide； thin film； resistance； M-S phase transition
