(上海交通大学 材料科学与工程学院 教育部高温材料及
高温测试重点实验室，上海 200030)
摘 要: 研究了Cr-Si-Al和Cr-Si-Al-N两种薄膜的微观结构及电性能。结果表明：溅射态非晶Cr-Si-Al和Cr-Si-Al-N薄膜在加热到700℃的过程中，将析出两种晶化相，即Cr(Al，Si)2和Si微晶相；氮元素加至Cr-Si-Al非晶膜中，将阻碍其中晶化相的形核与长大；与Cr-Si-Al薄膜相比，Cr-Si-Al-N薄膜欲获得较小电阻温度系数(TCR)需要更高的退火温度；Cr-Si-Al-N电阻膜具有更高的电学稳定性。
关键字: 电阻薄膜；晶化；氮；电学稳定性
behavior and electrical properties of
Cr-Si-Al resistive films
（Key Laboratory of Education Ministry for High Temperature Materials and
Tests，School of Materials Science and Engineering，Shanghai Jiaotong
University，Shanghai 200030，China）
Abstract:The microstructure and electrical properties of annealed Cr-Si-Al and Cr-Si-Al-N films were investigated. The results show that，when sputtered amorphous Cr-Si-Al and Cr-Si-Al-N films are heated up to temperature of 700℃，they all crystallize into two phases: the nanocrystalline Cr(Al，Si)2 and Si phase. The addition of N into amorphous Cr-Si-Al films inhibits the nucleation and growth of the crystallization phase，resulting in the higher annealing temperatures for Cr-Si-Al-N films in comparison with Cr-Si-Al films to obtain a small temperature coefficient of resistance (TCR). As a result，the Cr-Si-Al-N resistive films have higher electrical stability.
Key words: resistive films; crystallization; nitrogen; electrical stability
