(1. 西安交通大学 金属材料强度国家重点实验室,
西安 710049;
2. 西安理工大学 材料科学与工程学院, 西安 710048)
摘 要: 用拓扑关系将硅/碳化硅材料转化为具有3个不同显微结构单元的整体，建立了等效电路，结合相关试验，计算了不同显微组织的硅/碳化硅材料的电阻率。得到的理论计算结果与实验值的综合相对误差仅为3.9%，分析比较了各相含量和分布形态对硅/碳化硅材料 整体电阻率的影响。结果表明，提高低电阻率硅的体积含量和其分布连续性， 可降低材料的整体电阻率。该方法可用来预测要得到所需电阻率材料中应具有的硅含量和分布形态，为确定制备材料的显微结构设计提供指导。
关键字: 硅/碳化硅；拓扑法；电阻率
new silicon/silicon carbide material by
topological method
（1. State Key Laboratory for Mechanical Behavior of Materials,
Xi′an Jiaotong University, Xi′an 710049, China;
2. School of Materials Science and Engineering,
Xi′an University of Technology, Xi′an 710048, China）
Abstract:The electrical resistivity of silicon/silicon carbide materials containing different microstructures was calculated by topological method. The theory result and the experiment value were in very good agreement, and the integrated relative error of them was only 3.9%. The effect of each phase volume fractions and distribution on the bulk material's electrical resistivity was analyzed and compared. The result indicated that the electrical resistivity of the bulk material can be reduced by improving the lower electrical resisitivity silicon phase volume fractions and its contiguity. This approach may predict the free silicon volume fractions and microstructures in the wanted electrical resistivity material, and provide the instruction for determining the material microstructures of preparing materials.
Key words: silicon/silicon carbide; topological method; electrical resistivity
