(1. 武汉理工大学 材料复合新技术国家重点实验室,
武汉 430070;
2. 浦项工业大学 浦项加速器实验室, 韩国)
摘 要: 利用X射线衍射应力分析的sin2ψ法测量、计算出氮化硅陶瓷试样的残余应力。分析表明，经平面磨磨削后的气压烧结氮化硅陶瓷试样表面存在的残余应力为拉应力，而再经过表面抛光处理，则可以适当地降低表面残余应力。
关键字: 残余应力；气压烧结；氮化硅
stress of ground surface of silicon
nitride ceramic
（1. State Key Laboratory of Advanced Technology for
Materials Synthesis and Processing, Wuhan University of
Technology, Wuhan 430070, China;
2. Pohang Accelerator Laboratory, Pohang University of
Technology, Postech, Po hang 790784, Korea）
Abstract:The principle of residual stress analysis by X-ray diffraction was introduced. And the residual stress of the surface of silicon nitride ceramic, which sintered by GPS and ground by plane grind, was tested and computed by the method of sin2ψ of X-ray diffraction analysis. The results indicate that there are tensile stresses in the surface of silicon nitride ceramic, and polishing can reduce the residual stress.
Key words: residual stress; gas pressure sinter; silicon nitride
