(西安交通大学 金属材料强度国家重点实验室, 西安 710049)
摘 要: 用反应磁控溅射法在不同偏压下沉积了Zr-Si-N扩散阻挡层。 结果表明: Zr-Si-N膜的成分、 电阻率和结构均随偏压的改变而不同;随着溅射偏压的增加, Zr-Si-N膜的表面粗糙度值增大; Zr/Si比值也随着偏压的增加而增大;电阻率随偏压的增加显著降低; Zr-Si-N膜的结构为类似Si3N4的氮硅化物非晶相与ZrN组成的复合结构, 随着偏压的升高ZrN由非晶转变为纳米晶, 而且ZrN晶体相增加。
关键字: Zr-Si-N; 扩散阻挡层; 偏压; 结构
diffusion barrier
(State Key Laboratory for Mechanical Behavior of Materials,
Xi′an Jiaotong University, Xi′an 710049, China)
Abstract: The Zr-Si-N diffusion barrier films were deposited by reactive magnetron sputtering with different negative biases. The composition, resistivity and structure of the Zr-Si-N films depend strongly on the substrates bias. With increasing the bias, the surface roughness and the ratio of Zr to Si of Zr-Si-N increase, but the resistivity of the films decreases. The microstructure of Zr-Si-N films is a composite structure consisting of ZrN and amorphous Si3N4-like compound of Si-N. With increasing the bias, the ZrN phase changes from amorphous to nanocrystalline, and the amount of ZrN crystalline phase in the films increases.
Key words: Zr-Si-N; diffusion barrier; bias; microstructure