Transactions of Nonferrous Metals Society of China The Chinese Journal of Nonferrous Metals

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中国有色金属学报

ZHONGGUO YOUSEJINSHU XUEBAO

第19卷    第4期    总第121期    2009年4月

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文章编号:1004-0609(2009)04-0766-07
多晶氧化铍陶瓷上金刚石薄膜的生长
陈永勤1, 2, 3,余志明1, 2, 3,方 梅1,魏秋平1, 2, 3,陈  爽1

(1. 中南大学 材料科学与工程学院,长沙 410083;
       2. 中南大学 粉末冶金国家重点实验室,长沙 410083;
  3. 中南大学 有色金属材料科学与工程教育部重点实验室,长沙 410083
)

摘 要: 采用热丝化学气相沉积(HFCVD)系统,以CH4和H2为反应气体,在多晶氧化铍陶瓷基体上沉积了金刚石薄膜。采用场发射扫描电子显微镜(FESEM)、原子力显微镜(AFM)和激光热物性测试仪进行检测分析,研究工艺参数对金刚石薄膜生长及膜/基复合体热学性能的影响。结果表明:随着CH4浓度的增加(或CH4浓度一定,反应气体总流量增加),金刚石晶粒尺寸逐渐减小,膜/基复合体的热导率逐渐降低;当CH4浓度为2%(体积分数),流量为30 cm3/min,压强为1.33 kPa时,沉积的膜/基复合体的热导率最高,可达2.663 W/(cm·K)。

 

关键字: 金刚石薄膜;氧化铍;热丝化学气相沉积;工艺参数;热导率

Growth of diamond films on berillia ceramic
CHEN Yong-qin1, 2, 3, YU Zhi-ming1, 2, 3, FANG Mei1, WEI Qiu-ping1, 2, 3, CHEN Shuang1

1. School of Materials Science and Engineering, Central South University, Changsha 410083, China;
2. State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China;
3. Key Laboratory for Nonferrous Materials Science and Engineering, Ministry of Education,
Central South University, Changsha 410083, China

Abstract: The diamond films on berillia ceramic were deposited under changing conditions in hot filament chemical vapor deposition (HFCVD) system. The surface structures and morphologies were investigated by field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM), and the thermal conductivity of diamond film/berillia substrate composites were detected by laser-diathermometer. The results show that, with the increase of concentration of CH4 or total gas flow, the grain size of diamond and the thermal conductivity of composites reduce. When the concentration of CH4 is 2%, the total gas flow is 30 cm3/min and the pressure of the chamber is 1.33 kPa, the thermal conductivity of diamond and berillia composite can reach 2.663 W/(cm·K).

 

Key words: diamond film; berillia; hot filament chemical vapor deposition; process parameters; thermal conductivity

ISSN 1004-0609
CN 43-1238/TG
CODEN: ZYJXFK

ISSN 1003-6326
CN 43-1239/TG
CODEN: TNMCEW

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