( 1. 中南大学 物理科学与技术学院, 长沙 410083;
2. 中南大学 材料科学与工程学院, 长沙 410083;
3. 上海理工大学 电气与工程学院, 上海 200093)
摘 要: 使用CF4和CH4为源气体, 利用射频等离子体增强化学气相沉积法, 制备了a-C∶F∶H薄膜样品。 采用拉曼光谱仪、 傅里叶变换红外光谱仪、 X射线光电子能谱仪(XPS)对薄膜的结构进行了测试和分析。 研究发现: 该膜呈空间网状结构,膜内碳与氟、 氢的结合主要以sp3形式存在, 而sp2形式的含量相对较少;在薄膜内主要含有C—Fx(x=1, 2, 3)、 C—C、 C—H2、 C—H3等以及不饱和C—C化学键; 同时, 薄膜中C—C—F键的含量比C—C—F2键的含量要高。 在不同功率下沉积的薄膜, 其化学键结构明显不同。
关键字: a-C∶F∶H薄膜;等离子体增强化学气相沉积; 低介电常数; 化学键
fluorinated amorphous carbon films
( 1. School of Physics Science and Technology,
Central South University, Changsha 410083, China;
2. School of Materials Science and Engineering,
Central South University, Changsha 410083, China;
3. School of Electric and Engineering,
University of Shanghai Science and Technology, Shanghai 200093, China)
Abstract: Fluorinated amorphous hydrogenated carbon (a-C∶F∶H) thin films were deposited by radio frequency plasma enhanced chemical vapor deposition (PECVD) reactor with CF4 and CH4 as source gases, at RF-power of 150 W or 200 W, and 100 ℃. The structure of the films was investigated by Raman spectroscopy, and it is found that the content of the hybrid-bonding configuration of sp3 is more than that of sp2. The component and chemical bands structure of the films were investigated by infrared (IR) absorption and X-ray photoelectron spectroscopy (XPS). The results of IR and XPS analysis suggest that the chemical bonding structures in the films are mainly C—Fx(x=1, 2, 3), C—H2, C—H3, C—C and unsaturated bonding of C—C. The relative content of C—C—F is much more than that of the C—C—F2 in these films. The chemical bonding structures change with different deposition power.
Key words: a-C∶F∶H thin films; plasma enhanced chemical vapor deposition(PECVD); low dielectric constant; chemical bands