(上海交通大学 材料科学与工程学院
教育部高温材料及测试重点实验室， 上海 200030)
摘 要: 采用磁控溅射方法在Si(100)基底上制备了Cr-Si-Ni电阻薄膜， 研究了不同温度退火时薄膜微观结构的转变过程以及对电阻率的影响。 结果表明： 薄膜在溅射态和低于300 ℃热处理时为非晶态； 退火温度高于300 ℃以后， 薄膜中析出CrSi2晶化相； 当退火温度达到600 ℃时， 薄膜中还有少量多晶Si相析出， 同时在薄膜与基底界面处还发生了原子的相互扩散； CrSi2晶化相成“岛”状结构， 弥散分布在非晶绝缘基底上； 薄膜室温电阻率随着退火温度的上升， 呈先上升、 后下降趋势； 薄膜电阻率随退火温度的变化行为与薄膜微观结构的变化以及界面扩散有关。
关键字: 电阻薄膜； Si基底； 微观结构； 界面扩散； 电阻率
（ Key Laboratory for High Temperature Materials and Tests of Ministry of Education, School of Materials Science and Engineering, Shanghai Jiaotong University, Shanghai 200030, China）
Abstract: Cr-Si-Ni resistive films were prepared on n-type Si (100) substrates by magnetron sputtering. The microstructure evolution and electrical resistivity of the films as a function of annealing temperatures were investigated. The results reveal that the microstructure of the films at as-deposited state and annealed at temperature lower than 300 ℃ are amorphous state. With the annealing temperature increases to higher than 300 ℃, the nanocrystalline CrSi2 begins to appear. A few polycrystalline Si phase is separated at the films, and an atomic interdiffusion at the interface between the films and Si substrates can be observed, when the annealing temperature reaches 600 ℃. Cr-Si-Ni films consist of the nanocrystalline phase as an island dispersed in amorphous insulating matrix. With the annealing temperatures increasing, the room temperature resistivity of the films rises at the beginning, then goes down. The annealing behavior of the resistivity is correlated with the microstructure and interfacial diffusion of the films.
Key words: resistive film; Si substrates; microstructure; interfacial diffusion; electrical resistivity
