Transactions of Nonferrous Metals Society of China The Chinese Journal of Nonferrous Metals

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中国有色金属学报

ZHONGGUO YOUSEJINSHU XUEBAO

第15卷    第1期    总第70期    2005年1月

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文章编号: 1004-0609(2005)01-0094-06
溶胶-凝胶提拉法制备ITO透明导电膜
陈世柱, 李 晶

(中南大学 材料科学与工程学院,长沙 410083)

摘 要:  采用溶胶-凝胶(sol-gel)法, 利用自制的提拉实验设备于石英玻璃片上制得了ITO(indium tin oxide)透明导电薄膜,并就薄膜的物相结构、 微观组织、 导电性能及透光性等进行了研究分析。 结果表明: 薄膜的方电阻和透光性与提拉速度、提拉次数、 热处理温度、 冷却方式及Sn原子掺杂量等因素有关。 当Sn原子掺杂量为12.5%(质量分数)、 提拉速度为80 mm/min、 经5次提拉且每次提拉后经550 °C热处理(炉外空冷)而最终制得的ITO薄膜的方电阻为110 Ω/, 透光率可达90%以上。 用溶胶-凝胶法制备ITO薄膜具有工艺简单可控, 成本较低且宜于大面积成膜等优点。

 

关键字:  sol-gel法; 提拉; ITO膜; 透明; 导电

Sol-gel dip-coating technique for preparation of ITO thin film
CHEN Shi-zhu, LI Jing

School of Materials Science and Technology,
Central South University, Changsha 410083, China

Abstract: The ITO(Indium tin oxide) thin films were prepared by sol-gel method on the quartz glass slices to be clipped by a lab-scale dip-coating equipment. The structure properties and the physical properties (electrical resistance and transmittance) of the films were investigated by XRD, SEM, IR four-probe method and UV-VIS spectrometer. The experimental results indicate the possibility to prepare transparent and conductive ITO films by sol-gel dip-coating technique. The resistance and transmissivity of films is related to the tin atoms volume to be adulterated, dip-coating speed, heat treatment temperature, et al. The resistance of the ITO films is 110 Ω/□ and the transmissivity is above 90% at the visible light area when tin atoms content in the sample is 12.5%(mass fraction), the dip-coating speed is 80 mm/min and the heat treatment temperature is 550 °C in the technique condition. It will be convenient for preparation of large area ITO films by sol-gel dip-coating technology in low cost.

 

Key words: sol-gel technique; dip-coating; indium tin oxide film; limpidity; conducting electricity

ISSN 1004-0609
CN 43-1238/TG
CODEN: ZYJXFK

ISSN 1003-6326
CN 43-1239/TG
CODEN: TNMCEW

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