Transactions of Nonferrous Metals Society of China The Chinese Journal of Nonferrous Metals

您目前所在的位置:首页 - 期刊简介 - 详细页面

中国有色金属学报

ZHONGGUO YOUSEJINSHU XUEBAO

第16卷    第11期    总第92期    2006年11月

[PDF全文下载]        

    

文章编号: 1004-0609(2006)11-1913-05
AlSiC电子封装基片的制备与性能
熊德赣, 刘希从, 鲍小恒, 白书欣,杨盛良, 赵  恂

(国防科技大学 航天与材料工程学院, 长沙 410073)

摘 要:  采用模压成形制备SiC预制件和真空压力浸渗相结合的技术, 成功制备出AlSiC电子封装基片。 研究磷酸铝含量和成形压力对SiC预制件抗弯强度和孔隙率的影响规律, 并对所制备的AlSiC电子封装基片的性能进行评价。 结果表明, 在磷酸铝含量为0.8%, 成形压力为200 MPa时, 经600 ℃恒温2 h处理的SiC预制件抗弯强度为8.46 MPa, 孔隙率为37%。 当温度为100~500 ℃时, AlSiC电子封装基片的热膨胀系数介于6.88×10-6和8.14×10-6-1之间, 热导率为170 W/(m·K), 抗弯强度为398 MPa, 气密性小于1×10-8 Pa·m3/s。 用钯盐活化进行化学镀镍, 得到光亮、 完整的镀层。 镀层于450 ℃恒温120 s后, 镀层不变色, 未见起皮和鼓泡。

 

关键字:  AlSiC电子封装基片; 气密性; 真空压力浸渗; 化学镀镍

Fabrication and property of aluminum silicon carbide electronic packaging baseplates
XIONG De-gan, LIU Xi-cong, BAO Xiao-heng, BAI Shu-xin,
 YANG Sheng-liang, ZHAO Xun

College of Astronautics and Material Engineering,
 National University of Defence Technology, Changsha 410073, China

Abstract: The aluminum silicon carbide electronic packaging baseplates were produced successfully by combination of compression molding for SiC preform and vacuum pressure infiltration. The effects of amount of aluminum phosphate and molding pressure on porosity and strength of SiC preform were investigated, and the properties of AlSiC electronic packaging baseplates were also evaluated. The results show that the bending strength and porosity of SiC perform dried at 600 ℃ for 2 h are 8.46 MPa and 37%, respectively, when the content of aluminum phosphate is 0.8% and the molding pressure is 200 MPa. The coefficient of thermal expansion of AlSiC electronic packaging baseplates ranges from 6.88×10-6 to 8.14×10-6-1 at the temperatures of 100-500 ℃, the thermal conductivity is 170 W/(m·K), the bending strength is 398 MPa and the hermeticity is less than 1×10-8 Pa·m3/s. The electroless nickel was processed by utilizing palladium chloride as activator. The plating layer with bright, smooth and continuous surface has good adhesion when it is exposed at 450 ℃ for 120 s.

 

Key words: aluminum silicon carbide electronic packaging baseplate; hermeticity; vacuum pressure infiltration; electroless nickel plating

ISSN 1004-0609
CN 43-1238/TG
CODEN: ZYJXFK

ISSN 1003-6326
CN 43-1239/TG
CODEN: TNMCEW

主管:中国科学技术协会 主办:中国有色金属学会 承办:中南大学
湘ICP备09001153号 版权所有:《中国有色金属学报》编辑部
------------------------------------------------------------------------------------------
地 址:湖南省长沙市岳麓山中南大学内 邮编:410083
电 话:0731-88876765,88877197,88830410   传真:0731-88877197   电子邮箱:f_ysxb@163.com