(1. 江苏工业学院 材料科学与工程系, 常州 213016；
2. 江苏大学 材料科学与工程学院, 镇江 212013；
3. 河海大学 材料科学与工程系, 南京 210098；
4. 特拉华大学 材料科学与工程系, 纽华克19711, 美国)
摘 要: 在醇-水体系中以HMT为缓释沉淀剂制备了纳米CeO2粉体, 并用TEM、 SAD、 XRD对其进行了表征, 将制备的不同粒径纳米CeO2粉体配制成抛光液, 对GaAs晶片进行了化学机械抛光。 研究了醇的引入及煅烧温度对粉体性能的影响, 并就纳米CeO2磨料尺寸对GaAs晶片抛光后表面粗糙度的影响机理进行了探讨。 结果表明： 醇水体系中制备的纳米CeO2颗粒较水溶液中制备的颗粒粒径小, 且分散性好; 随着煅烧温度的升高, 颗粒逐渐增大, 不同尺寸的纳米颗粒具有不同的抛光效果; 随着磨料粒径的增大, 表面粗糙度值也随之升高。
关键字: 纳米CeO2； GaAs； 醇水法； 抛光
on GaAs wafer
（1. Department of Materials Science and Engineering,
Jiangsu Polytechnic University, Changzhou 213016, China;
2. School of Materials Science and Engineering,
Jiangsu University, Zhenjiang 212013, China;
3. Department of Materials Science and Engineering,
Hehai University, Nanjing 210098, China;
4. Department of Materials Science and Engineering,
University of Delaware, Newark 19711, USA）
Abstract: Nano-sized CeO2 powders were synthesized by homogeneous precipitation method in alcohol-water solution with HMT as precipitator, the powders were characterized by TEM, SAD and XRD. The prepared powders were collocated into polishing slurry for chemical mechanical polishing of GaAs wafer. The effects of alcohol nature and calcine temperature on the resultant CeO2 nanoparticles were investigated, and the influence mechanism of nano-CeO2 size on the roughness of GaAs wafer was also discussed. The results show that the particles prepared by the above method are of smaller size and better dispersion than those obtained from the ordinary powders synthesized in water solution. The particle size become larger with the increase of calcination temperature. Various size of particles have the different polishing effect, of which the surface roughness rises with the increase of particle size.
Key words: nano-sized CeO2； GaAs； alcohol-water method； polishing
