(中南大学 冶金科学与工程学院，长沙 410083)
摘 要: 采用电沉积法制备了CuInSe2薄膜材料，研究了制备工艺条件对材料组成、结构与性能的影响。研究结果表明：最佳的沉积电位范围为−0.6~−0.8 V(vs SCE)；硒化退火是获得高质量CuInSe2薄膜的必要过程，硒化退火温度应控制在440~610 ℃范围内；在不同沉积电位和不同电解质浓度组成溶液中，通过电沉积并在500 ℃下硒化退火均可获得黄铜矿结构CuInSe2多晶薄膜；沉积电位的负移会使膜层中CuInSe2的相对含量增加，晶型完善，且杂相减少；随着电解质浓度的增加，电沉积CuInSe2退火后结晶程度变好，颗粒变得粗壮，致密性也有所改善；电沉积并硒化退火后薄膜中的铜铟摩尔比受沉积电位和电解质浓度影响较大，当沉积电位为−0.7和−0.8 V时，铜铟摩尔比约为1较为理想，且铜铟摩尔比的变化与电解液中CuCl2和InCl3的摩尔比变化一致。
关键字: CuInSe2(CIS)；太阳电池； 薄膜； 电沉积；硒化退火
CuInSe2 thin films by electrodeposition
（School of Metallurgical Science and Engineering, Central South University, Changsha 410083, China）
Abstract:CuInSe2 thin films were obtained by electrodeposition, and the preparation conditions and their effect on performance of CuInSe2 films were investigated. The results show that the optimum ranges of potentials for electrodeposition and annealing temperature are about −0.6−−0.8 V(vs SCE) and 440−610 ℃, respectively. Annealing is a necessary step for getting high-quality CuInSe2 thin films. CuInSe2 thin films can be prepared at different deposition potentials and electrolyte concentrations. As the potential moves to negative, the concentration of CuInSe2 increases, crystallinity and uniformity become better, and impurity phase decreases. The crystallinity and density improve, and the grains grow bulkier as the concentration of electrolyte increases. In all electrodeposited CuInSe2 thin films, the potential and electrolyte concentration can influence the mole ratio of Cu to In greatly. At the potentials of −0.7 and −0.8 V(vs SCE), the mole ratio of Cu to In is very reasonable at about 1. The change of mole ratio of Cu to In has the same trend as that of CuCl2 to InCl3 in electrolyte.
Key words: CuInSe2(CIS); solar cells; thin film; electrodeposition; selenized annealing
