(中南大学 物理科学与技术学院，长沙410083)
摘 要: 利用射频反应磁控溅射在Si(100)基底上沉积AlN介质薄膜，并在不同温度下对薄膜进行快速退火。通过抗电强度测试仪、电容电压测试C?V、X射线衍射仪、电子能谱仪、原子力显微镜和椭圆偏振仪等研究薄膜的击穿电压、介电常数、晶体结构、化学成分、表面形貌及薄膜的折射率。结果表明：溅射功率和溅射气压对薄膜的击穿电压有很大的影响，溅射功率为250 W，气压为0.3 Pa时薄膜的抗电性能较好；薄膜的成分随溅射气压发生变化，N与Al摩尔比最高达到0.845；随退火温度的增加，薄膜晶体结构发生非晶—闪锌矿—纤锌矿的转变；薄膜的折射率随退火温度的升高而增加。
关键字: AlN薄膜；磁控溅射；击穿电压；快速退火
（School of Physics Science and Technology, Central South University, Changsha 410083,China）
Abstract:AlN dielectric thin films were deposited on N type Si(100) substrate by reactive radio frequency magnetron sputtering under different sputtering-power and total pressure. And rapid thermal annealing (RTA) was preformed on these films respectively for 5 min under different temperatures. The breakdown voltage, permittivity, crystal structure, composition, surface and refractive index of the thin films were studied by I-V, C-V, XRD, EDS, AFM and elliptical polarization instrument. The results show that the breakdown voltage of the thin films strongly depends on the sputtering-power and total pressure, the greatest breakdown voltage is found at 250 W and 0.3 Pa. EDS analysis shows that the mole ratio of N to Al of AlN thin films changes with total pressure, and reaches its peak value of 0.845 at 0.3 Pa. The crystal structure of the as-deposited thin-films is amorphous, then it transforms from blende structure to wurtzite structure as the rapid thermal annealing(RTA) temperature changes from 600 to 1 000 ℃. The refractive index also increases with the RTA temperature.
Key words: AlN thin films; magnetron sputtering; breakdown voltage; rapid thermal annealing(RTA)
