中国有色金属学报(英文版)
Transactions of Nonferrous Metals Society of China
| Vol. 21 No. 9 September 2011 |
（1. Department of Architecture, National Cheng Kung University, Tainan, China;
2. Institute of Nanotechnology and Microsystems Engineering, Center for Micro/Nano Science and Technology,
National Cheng Kung University, Tainan, China;
3. Department of Materials Science and Engineering, National Cheng Kung University, Tainan, China）
Abstract:The sputtered Sn-Al and Sn-Cu thin films were used to investigate the effects of the crystallization mechanism and film thickness on the electromagnetic interference (EMI) characteristics. In addition, the annealed microstructure, electrical conductivities and EMI characteristics of the Sn-xAl films and the Sn-xCu films were compared. The results show that the electromagnetic interference (EMI) shielding of Sn-Al film was increased after annealing. For the Sn-Cu films with higher Cu mole concentration, the low frequency EMI shielding could not be improved. After annealing, the Sn-Cu thin film with lower Cu mole concentration possesses excellent EMI shielding at lower frequencies, but has an inverse tendency at higher frequencies.
Key words: electromagnetic interference (EMI); Sn-Al; Sn-Cu; thin film
