中国有色金属学报(英文版)
Transactions of Nonferrous Metals Society of China
| Vol. 21 Special 1 March 2011 |
atomic layer deposition for thermal inkjet printheads
（1. National Core Research Center for Hybrid Materials Solution,
Pusan National University, Busan 609-735, Korea;
2. Department of Materials Science and Engineering,
Korea Advanced Institute of Science and Technology, Daejon 373-1, Korea）
Abstract:IrO2-TiO2 thin films were prepared by atomic layer deposition using Ir(EtCp)(COD) and titanium isopropoxide (TTIP). The resistivity of IrO2-TiO2 thin films can be easily controlled from 1 500 to 356.7 μΩ·cm by the IrO2 intermixing ratio from 0.55 to 0.78 in the IrO2-TiO2 thin films. The low temperature coefficient of resistance(TCR) values can be obtained by adopting IrO2-TiO2 composite thin films. Moreover, the change in the resistivity of IrO2-TiO2 thin films was below 10% even after O2 annealing process at 600 °C. The step stress test results show that IrO2-TiO2 films have better characteristics than conventional TaN0.8 heater resistor. Therefore, IrO2-TiO2 composite thin films can be used as a heater resistor material in thermal inkjet printhead.
Key words: IrO2-TiO2 film; heating resistor; inkjet
