中国有色金属学报(英文版)
Transactions of Nonferrous Metals Society of China
| Vol. 21 No. 1 January 2011 |
materials by molecular-beam epitaxy
（Key Laboratory of Advanced Technique and Fabrication for Weak-light Nonlinear Photonics Materials of
Ministry of Education, Nankai University, Tianjin 300457, China）
Abstract:Thermodynamic models for molecular-beam epitaxy (MBE) growth of ternary III-V semiconductor materials are proposed. These models are in agreement with our experimental materials InGaP/GaAs and InGaAs/InP, and reported GaAsP/GaAs and InAsP/InP in thermodynamic growth. The lattice strain energy ΔG and thermal decomposition sensitive to growth temperature are demonstrated in the models simultaneously. ΔG is the function of the alloy composition, which is affected by flux ratio and growth temperature directly. The calculation results reveal that flux ratio and growth temperature mainly influence the growth process. Thermodynamic model of quaternary InGaAsP/GaAs semiconductor material is discussed also.
Key words: semiconductor materials; III-V compounds; growth; thermodynamics
