Abstract:Thin films of Ti and Ni deposited on AlN substrate by e-gun evaporation were annealed at the temperatures from 600℃to 800℃and from 600℃to 850℃ for 1 h respectively. Solid-state reaction products between the metal films and AlN substrate under annealing were investigated by X-ray diffraction (XRD) and Ruthford backscattering spectrometry(RBS). TiAl₃TiN, and Ti₄N_3-x including Ti₂N were found at the interface between Ti film and AlN substrate for the annealed samples. In Ni/AlN system, NiAl₃ and Ni₃N were formed at the interface between Ni thin film and AlN substrate for the samples annealed above 600℃. NiAl₃ formed at the interface was very dense and hindered the diffusion of Al and N atoms into Ni thin films. As a result, the interface reaction was limited in the vicinity of the interface region.

Key words: thin films　interfacial reactions　AlN substrate