中国有色金属学报(英文版)
Transactions of Nonferrous Metals Society of China
| Vol. 12 No. 4 August 2002 |
（1. School of Materials Science and Engineering, Xi’an University of Technology, Xi’an 710048, China;
2. School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an 710072, China;
3. Department of Electronic Engineering, Tsinghua University, Beijing 100084, China;
4. College of Chemistry and Chemical Engineering, Shaanxi University of Science and Technology,
Xi’an 710054, China）
Abstract:The effect of surface damaged layer and Te enrichment layer of Hg1-xMnxTe on the indentation size were studied experimentally. Based on the results, the indentation size effect (ISE) of Hg1−xMnxTe were discussed using different models, including Meyer’s law, the power-law, Hays-Kendall approach and the theory of strain gradient plasticity. The results show that surface damaged layer weakens ISE of the wafers, but the Te enrichment layer reinforces it. The minimum test load necessary to initiate plastic deformation for different Hg1−xMnxTe wafers increases from 3.11 to 4.41 g with the increase of x from 0.05 to 0.11. The extrapolated surface hardness values of Hg1−xMnxTe are 347.21, 374.75, 378.28 and 391.51 MPa and the corresponding shear strength values are 694.53, 749.50, 756.56 and 783.12 MPa for Hg1−xMnxTe with the x values of 0.05, 0.07, 0.09 and 0.11, respectively.
Key words: Hg1−xMnxTe; indentation size effect; microhardness
