中国有色金属学报(英文版)
Transactions of Nonferrous Metals Society of China
| Vol. 19 No. 4 August 2009 |
（1. Korean Air Aerospace Division, Korean Air Lines Co., 103 Daejeo 2-dong, Gangseo-gu, Busan, 618-142, Korea;
2. Department of Mechanical and Material Engineering, Korea Maritime University, Dongsam-dong,
Youngdo-ku, Busan, Korea;
3. Department of Mechanical Engineering, The University of Tokushima, 2-1 Minami-josanjima-cho,
Tokushima, 770-8506, Japan）
Abstract:IZO films were deposited onto PET substrate at room temperature with the inclined opposite target type DC magnetron sputtering equipment, in which a sintered oxide IZO target (doped with 10% ZnO, packing density of 99.99%) was used. The effects of total sputtering pressure and film thickness on IZO films properties were studied. All the films produced at room temperature have a amorphous structure, irrespective of the total sputtering pressure and film thickness. A resistivity of the order of 10−4 Ω·cm was obtained for IZO films deposited at lower pressure (film thickness of 190 nm). The resistivity of IZO films deposited at room temperature depends on film thickness and shows a minimum at a thickness of 530 nm.
Key words: indium-zinc-oxide(IZO); inclination opposite target type DC magnetron sputtering; transparent conductive oxide(TCO); electromagnetic wave shielding effectiveness(SE)
