中国有色金属学报(英文版)
Transactions of Nonferrous Metals Society of China
| Vol. 19 No. 1 February 2009 |
（1. School of Materials Science and Engineering, South China University of Technology,
Guangzhou 510640, China;
2. Guangdong Institute of Special Equipments Inspection and Supervision, Guangzhou 510655, China;
3. Guangzhou Research Institute of Non-ferrous Metals, Guangzhou 510651, China）
Abstract:The uniform diamond films with 60 mm in diameter were deposited by improved DC arc plasma jet chemical vapor deposition technique. The structure of the film was characterized by scanning electronic microcopy(SEM) and laser Raman spectrometry. The thermal conductivity was measured by a photo thermal deflection technique. The effects of main deposition parameters on microstructure and thermal conductivity of the films were investigated. The results show that high thermal conductivity, 10.0 W/(K∙cm), can be obtained at a CH4 concentration of 1.5% (volume fraction) and the substrate temperatures of 880−920 ℃ due to the high density and high purity of the film. A low pressure difference between nozzle and vacuum chamber is also beneficial to the high thermal conductivity.
Key words: diamond film; microstructure; thermal conductivity; DC arc plasma jet CVD
