(1. 中南大学 物理科学与技术学院，长沙 410083；
2. 中南大学 材料科学与工程学院，长沙 410083；
3. 上海理工大学 电气工程学院，上海 200093)
摘 要:
关键字: 氮化铜薄膜；晶体结构；光学带隙；电阻率
radio frequency magnetron sputtering
（1. School of Physics Science and Technology, Central South University,Changsha 410083, China;
2. School of Material Science and Engineering, Central South University,Changsha 410083, China;
3. School of Electric and Engineering,University of Shanghai Science and Technology, ShangHai 200093, China）
Abstract:Copper nitride (Cu3N) thin films were deposited by reactive radio frequency magnetron sputtering under different discharge powers and gas flow ratios. The structures of films were characterized by atomic force microscopy (AFM) and X-ray diffraction spectra (XRD). The properties of films were analyzed by UV-VIS spectra and four-probe method. The results show that the films’ growth prefers (111) direction at low nitrogen press and (100) direction at high nitrogen pressure. The optical band gap of the films ranges from 1.44 to 1.69 eV, the resistivity ranges from 60 to 5.6×105Ω∙m, and they both increase with the increase of nitrogen pressure.
Key words: copper nitride thin films; crystal structure; optical band gap; resistivity
