Transactions of Nonferrous Metals Society of China The Chinese Journal of Nonferrous Metals

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中国有色金属学报(英文版)

Transactions of Nonferrous Metals Society of China

Vol. 21    Special 1    March 2011

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Properties of multilayer gallium and aluminum doped ZnO(GZO/AZO) transparent thin films deposited by pulsed laser deposition process
Jin-Hyun SHIN, Dong-Kyun SHIN, Hee-Young LEE, Jai-Yeoul LEE

Department of Materials Engineering, Yeungnam University, Gyongsan 712-749, Korea

Abstract:Multilayer gallium and aluminum doped ZnO (GZO/AZO) films were fabricated by alternative deposition of Ga-doped zinc oxide(GZO) and Al-doped zinc oxide(AZO) thin film by using pulsed laser deposition(PLD) process. The electrical and optical properties of these GZO/AZO thin films were investigated and compared with those of GZO and AZO thin films. The GZO/AZO (1:1) thin film deposited at 400 °C shows the electrical resistivity of 4.18×10−4 Ω∙cm, an electron concentration of 7.5×1020 /cm3, and carrier mobility of 25.4 cm2/(V∙s). The optical transmittances of GZO/AZO thin films are over 85%. The optical band gap energy of GZO/AZO thin films linearly decreases with increasing the Al ratio.

 

Key words: multilayer; thin films; Ga-doped zinc oxide; Al-doped zinc oxide; pulsed laser deposition

ISSN 1004-0609
CN 43-1238/TG
CODEN: ZYJXFK

ISSN 1003-6326
CN 43-1239/TG
CODEN: TNMCEW

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